r07ds0507ej0100 rev.1.00 page 1 of 6 sep 16, 2011 preliminary data sheet np28n10sde mos field effect transistor description the np28n10sde is n-channel mos field effect transistor designed for high current switching applications. features ? low on-state resistance r ds(on)1 = 52 m max. (v gs = 10 v, i d = 14 a) r ds(on)2 = 59 m max. (v gs = 4.5 v, i d = 14 a) ? low c iss : c iss = 2200 pf typ. (v ds = 25 v) ? designed for automotive application and aec-q101 qualified ordering information part no. lead plating packing package NP28N10SDE-E1-AY ? 1 taping (e1 type) to-252 (mp-3zk) np28n10sde-e2-ay ? 1 pure sn (tin) tape 2500 p/reel taping (e2 type) note: ? 1. pb-free (this product does not cont ain pb in the external electrode.) absolute maximum ratings (t a = 25 c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 100 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25 c) i d(dc) 28 a drain current (pulse) ? 1 i d(pulse) 60 a total power dissipation (t c = 25 c) p t1 100 w total power dissipation (t a = 25 c) ? 2 p t2 1.2 w channel temperature t ch 175 c storage temperature t stg ? 55 to +175 c single avalanche current ? 3 i as 24 a single avalanche energy ? 3 e as 58 mj thermal resistance channel to case thermal resistance r th(ch-c) 1.50 c/w channel to ambient thermal resistance ? 2 r th(ch-a) 125 c/w notes: ? 1. t c = 25 c, pw 10 s, duty cycle 1% ? 2. mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mm with 4% copper area (35 m) ? 3. t ch(start) = 25 c, v dd = 50 v, r g = 25 , l = 100 h, v gs = 20 v 0 v r07ds0507ej0100 rev.1.00 sep 16, 2011
np28n10sde chapter title r07ds0507ej0100 rev.1.00 page 2 of 6 sep 16, 2011 electrical characteristics (t a = 25 c) item symbol min. typ. max. unit test conditions zero gate voltage drain current i dss 10 a v ds = 100 v, v gs = 0 v gate leakage current i gss 100 na v gs = 20 v, v ds = 0 v gate to source threshold voltage v gs(th) 1.5 2.0 2.5 v v ds = v gs , i d = 250 a forward transfer admittance ? 1 | y fs | 9 18 s v ds = 10 v, i d = 14 a r ds(on)1 41 52 m v gs = 10 v, i d = 14 a drain to source on-state resistance ? 1 r ds(on)2 45 59 m v gs = 4.5 v, i d = 14 a input capacitance c iss 2200 3300 pf v ds = 25 v, output capacitance c oss 160 240 pf v gs = 0 v, reverse transfer capacitance c rss 90 165 pf f = 1 mhz turn-on delay time t d(on) 12 39 ns v dd = 50 v, id = 14 a, rise time t r 9 23 ns v gs = 10 v turn-off delay time t d(off) 53 106 ns r g = 0 fall time t f 5 13 ns total gate charge q g 49 75 nc gate to source charge q gs 7 nc gate to drain charge q gd 13 nc v dd = 80 v, v gs = 10 v, i d = 28 a body diode forward voltage ? 1 v f(s-d) 1 1.5 v i f = 28 a, v gs = 0 v reverse recovery time t rr 73 ns reverse recovery charge q rr 175 nc i f = 28 a, v gs = 0 v, di/dt = 100 a/ s note: ? 1. pulsed test test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
np28n10sde chapter title r07ds0507ej0100 rev.1.00 page 3 of 6 sep 16, 2011 typical characteristics (t a = 25 c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c - case temperature - c forward bias safe operating area i d - drain current - a 0.1 1 10 100 0.1 1 10 100 r ds(on) limited 1 ms t c = 25 c single pulse power dissipation limited secondar y brakedown limited i d(pulse) = 60 a i d(dc) = 28 a pw = 100 s dc (v gs = 10 v) v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 single pulse mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mm with 4% copper area (35 m) r th(ch-c) = 1.50 c/w r th(ch-a) = 125 c/w pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
np28n10sde chapter title r07ds0507ej0100 rev.1.00 page 4 of 6 sep 16, 2011 drain current vs. drain to source voltage forward transf er characteristics i d - drain current - a 0 10 20 30 40 50 60 012345 pulsed v gs = 10 v 4.5 v v ds - drain to source voltage - v i d - drain current - a 0.001 0.01 0.1 1 10 100 012345 v ds = 10 v pu ls e d t a = ? 55 c ? 25 c 25 c 75 c 125 c 150 c 175 c v gs - gate to source voltage - v gate to source threshold voltage vs. channel temperature forward transfer admittance vs. drain current v gs(th) - gate to source threshold voltage - v 0 1 2 3 -100 -50 0 50 100 150 200 v ds = v gs i d = 250 a t ch - channel temperature - c | y fs | - forward transfer admittance - s 1 10 100 0.1 1 10 100 v ds = 10 v pulsed 125 c 150 c 175 c t a = ? 55 c ? 25 c 25 c 75 c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 10 v pulsed v gs = 4.5 v i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 10 20 30 40 50 60 70 80 0 2 4 6 8 101214161820 pulsed i d = 28 a 14a 5.6 a v gs - gate to source voltage - v
np28n10sde chapter title r07ds0507ej0100 rev.1.00 page 5 of 6 sep 16, 2011 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 20 40 60 80 100 120 -100 -50 0 50 100 150 200 i d = 14 a pulsed v gs = 10 v 4.5 v t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 10 100 1000 10000 0.01 0.1 1 10 100 v gs = 0 v f = 1mhz c iss c oss c rss v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 0.1 1 10 100 v dd = 50 v v gs = 10 v r g = 0 t d(off) t d(on) t f t r i d - drain current - a v ds - drain to source voltage - v 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 i d = 28 a v ds v gs v dd = 8 0 v 50 v 20 v q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage reverse recovery time vs. drain current i f - diode forward current - a 0.01 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 pulsed 0 v v gs = 10 v v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 1 10 100 1000 0.1 1 10 100 di/dt = 100 a/ s v gs = 0 v i f - drain current - a
np28n10sde chapter title r07ds0507ej0100 rev.1.00 page 6 of 6 sep 16, 2011 package drawing (unit: mm) to-252 (mp-3zk) (mass: 0.27 g typ.) 6.5 0.2 2.3 0.1 0.5 0.1 0.76 0.12 0 to 0.25 0.5 0.1 1.0 no plating no plating 5.1 typ. 1.0 typ. 6.1 0.2 0.51 min. 4.0 min . 0.8 10.4 max. (9.8 typ.) 4.3 min. 1 4 23 1.14 max. 2.3 2.3 1. gate 2. drain 3. source 4. fin (drain) equivalent circuit source body diode gate drain remark strong electric field, when exposed to this device, can cause destructi on of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickl y dissipate it once, when it has occurred.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history np28n10sde data sheet description rev. date page summary 1.00 sep 16, 2011 ? first edition issued
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